Ja n 19 99 Magnetic – Field – Induced Exciton Tunneling in Shallow Quantum Wells
نویسندگان
چکیده
We study the effect of the magnetic field orientation on the electroabsorp-tion spectra of excitons confined in extremely shallow quantum wells. When the applied electric field is parallel to the quantum well plane, we demonstrate that, for in–plane magnetic field orientation, the discrete confined exciton peak undergoes a transition into a continuum resonance. In contrast, for perpendicular magnetic fields, the exciton peak exhibits the usual Stark red–shift. We show that such a dramatic dependence on the magnetic field orientation originates from a resonant coupling between the confined and the bulk–like excitons. Such coupling is caused by the interplay between the quantum–well potential and a velocity–dependent two–body interaction between the exci-ton center–of–mass and relative motion degrees of freedom induced by the in–plane magnetic field. As a result, the exciton tunnels out of the quantum well as a whole without being ionized. We discuss possible experimental applications of this effect.
منابع مشابه
Time-resolved luminescence of semiconductor heterostructures in high magnetic fields
We report on time-resolved luminescence in GaAs quantum wells in high magnetic fields up to 21 T. Results on resonant tunneling and exciton relaxation including spin flip are presented.
متن کاملPii: S0038-1098(99)00502-5
We have studied the effect of the magnetic field on the indirect excitons in coupled quantum wells in GaAs at magnetic fields up to 25 T. An unexpectedly large red shift of the indirect exciton line occurs at relatively low magnetic field. This shift depends strongly on the electric field applied parallel to the growth direction. q 2000 Elsevier Science Ltd. All rights reserved.
متن کاملTunneling competition of photoexcited carriers in a system of monolithically integrated dual multiple InGaAs/AlGaAs and GaAs/AlGaAs quantum wells
Vertical transport of photoexcited carriers has been studied in a p-i-n diode whose intrinsic layer contains two different multiple quantum wells (MQW), GaAs/Al0.15Ga0.85As (MQW1) and strained In0.15Ga0.85As/Al0.15Ga0.85As (MQW2) isolated by a thick Al0.15Ga0.85As barrier. Pseudo-negative photocurrent (PC) peaks are observed at exciton resonance wavelengths of MQW1 located far from the n-electr...
متن کاملTRION-BASED OPTICAL PROCESSES IN SEMICONDUCTOR QUANTUM WELLS by THOMAS KENDRICK BALDWIN A DISSERTATION
Original approval signatures are on file with the University of Oregon Graduate School. In a semiconductor, negative charge is carried by conduction-band electrons and positive charge is carried by valence-band holes. While charge transport properties can be understood by considering the motion of these carriers individually, the optical properties are largely determined by their mutual interac...
متن کاملExcitons in near-surface quantum wells in magnetic fields: Experiment and theory
The exciton transition and binding energies have been investigated in near-surface InGaAs/GaAs quantum wells theoretically and experimentally ~by photoluminescence and photoluminescence excitation spectroscopy at 4.2 K!. The contribution induced by vacuum has been analyzed for the ground and excited exciton states in perpendicular magnetic fields up to 14 T. The vacuum potential barrier has bee...
متن کامل